주기적으로 천공된 접지금속막 선로를 이용한 MMIC용 초소형 저임피던스 윌킨슨 전력분배기에 관한 연구

Abstract

RF components dealing with high frequency signals are most important in wireless communication system and the performance of the system depends on them. In order to realize highly miniaturized and fully integrated MMICs, the development of miniaturized on-chip passive components is indispensable. The development of miniaturized on-chip passive components with low port impedances will especially greatly reduce the size of MMICs by removing bulky impedance transformation circuits between the passive components and low-impedance FETs

generally, the input and output impedances of the FETs are much lower than 50 Ω in the RF frequency. Therefore, impedance transformation circuits should be employed for impedance matching between 50 Ω - based passive components and low-impedance FETs [1-5]. However, in case of fabricating low impedance line using the conventional microstrip with ground metal on the backside of GaAs substrate, the width of the line becomes very large. For instance, when making 15 Ω line on the GaAs substrate with 100 Ωm height, the width of the line reaches 800 Ωm.