한국해양대학교

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혼합소스 HVPE법에 의한 질화물 반도체 발광다이오드

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dc.contributor.author 장근숙 -
dc.date.accessioned 2017-02-22T07:25:54Z -
dc.date.available 2017-02-22T07:25:54Z -
dc.date.issued 2007 -
dc.date.submitted 56850-02-09 -
dc.identifier.uri http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002176400 ko_KR
dc.identifier.uri http://repository.kmou.ac.kr/handle/2014.oak/10801 -
dc.description.abstract Ⅲ-Nitride semiconductor light emitting diodes (LEDs) were fabricated by mixed-source HVPE. The LED structure was made of p-n junction with double heterostructure. For the growth of the LED structure, multisliding boat system was introduced to the mixed-source HVPE. And mask was designed for selective area growth of the LED structure. The double heterostructure of the LED was composed of Te-doped AlGaN as n-cladding layer, InGaN as active layer, Mg-doped AlGaN as p-cladding layer, and Mg-doped GaN as p-capping layer. Prior to growth of the double heterostructure, single layers which consist of the LED structure were grown by the mixed-source HVPE, respectively. Thecrystal quality, composition, and concentration of the layers were characterized by XRD, XPS, and Hall measurements. The Al composition of the AlGaN layers was controlled by variation of temperature of source zone. In case of the LED structure, the composition of Al was in control of 16%. The carrier concentrations of Te-doped AlGaN layer were controlled by change of Te atomic fractions in the mixed-source. For the LED structure, the carrier concentration of the Te-doped AlGaN cladding layer was controlled in the order of 1ⅹ1018 cm-3. The hole concentrations of Mg-doped AlGaN layer and Mg-GaN layer were controlled by Mg atomic fraction in the mixed-source. The hole concentration of the Mg-doped GaN was controlled in the order of 3ⅹ1017 cm-3. In the InGaN active layer, the composition of In was in control of 10%. The double heterostructure was grown consecutively by the mixedsource HVPE using the multi-sliding boat system. The side facets were consisted of pyramidal and inverse pyramidal shape for efficient light extraction. The characteristics of the LED were evaluated by I-V and electroluminescence. Even though the LED grown by the mixed-source HVPE need to be more improved in optical and electrical properties, it is worth to note that newly developed method of Ⅲ-Nitride semiconductor LED could be a candidate technology for the fabrication of low cost LEDs. -
dc.description.tableofcontents 1.서론 = 1 2.질화물 반도체 발광다이오드의 설계 = 6 2.1 Mixed-source HVPE = 6 2.2 Multi-sliding boat 설계 = 11 2.3 소자구조 설계 = 17 2.4 Mask 설계 = 23 2.5 공정 설계 = 31 3.질화물 반도체의 단층 성장 및 특성 = 34 3.1 AlGaN = 34 3.2 Te-doped AlGaN = 42 3.3 Mg-doped GaN와 Mg-doped AlGaN = 44 3.4 InGaN = 50 4.질화물 반도체 발광다이오드의 DH 성장 = 53 4.1 n-cladding층 성장 = 61 4.2 활성층 성장 = 64 4.3 p-cladding층 성장 = 66 4.4 p-capping층 성장 = 68 5.질화물 반도체 발광다이오드의 공정 = 70 5.1 n-전극형성 및 열처리 = 70 5.2 p-전극형성 및 열처리 = 74 6.질화물 반도체 발광다이오드의 특성 및 평가 = 80 6.1 구조분석 = 80 6.2 전류-전압 (I-V) 특성 = 86 6.3 전류-광출력 (EL) 특성 = 88 7.결론 = 91 참고 문헌 = 93 -
dc.language kor -
dc.publisher 한국해양대학교 대학원 -
dc.title 혼합소스 HVPE법에 의한 질화물 반도체 발광다이오드 -
dc.title.alternative Study on the fabrication of Ⅲ-Nitride semiconductor light emitting diodes by mixed-source HVPE -
dc.type Thesis -
dc.date.awarded 2007-02 -
dc.contributor.alternativeName Jang -
dc.contributor.alternativeName Keun-Suk -
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