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HVPE 방법에 의한 질화물 에피 성장에 대한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 안형수 | - |
| dc.contributor.author | 이찬빈 | - |
| dc.date.accessioned | 2019-12-16T02:41:30Z | - |
| dc.date.available | 2019-12-16T02:41:30Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/11337 | - |
| dc.identifier.uri | http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002329682 | - |
| dc.description.abstract | High-quality AlN wafers are urgently needed for the fabrication of AlGaN-based ultraviolet(UV) optoelectronic device and high-power, high-frequency electronic devices. Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. In order to grow the Al graded AlGaN epilayer and AlN epilayer, metal Al, metal Ga and NH3 as the source precursors with N2 carrier gas were prepared. During the growth, temperatures of source and the growth zone were set at 750℃ and 1145℃, respectively. In the reactor by the synthesis of NH3, AlCl and GaCl by using only one boat of the advanced HVPE method. The epilayers were investigated by field emission scanning electron microscope(FE-SEM), and energy dispersive spectroscopy(EDS), atomic force microscope(AFM) and x-ray diffraction(XRD). From these result, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices. | - |
| dc.description.tableofcontents | List of Tables iv List of Figures v Abstract vii 제 1장 서 론 1.1 연구목적 1 1.2 AlGaN 향후 연구분야 3 제 2장 이론적 배경 2.1 Ⅲ-Ⅴ족 화합물 반도체의 물성 6 2.1.1 GaN 8 2.1.2 AlN 10 2.1.3 AlGaN 16 2.2 에피탁시 성장기술 18 2.3 질화물 단결정 성장기술 20 2.3.1 수소기상 증착법(HVPE) 21 2.4 사파이어기판 22 2.5 Polarization 23 제 3 장 실험 및 측정방법 3.1 mixed-source HVPE 25 3.2 실 험 28 3.3 측정장비 32 3.3.1 FE-SEM 32 3.3.2 EDS 35 3.3.3 AFM 39 3.3.4 XRD 41 3.3.5 TEM 46 제 4 장 결과 및 고찰 4.1 사파이어 기판위의 graded AlGaN 50 4.1.1 소스량에 따른 Al 조절 실험 64 4.1.2 소스온도에 따른 Al 조절 실험 66 제 5 장 결 론 68 참고문헌 70 | - |
| dc.format.extent | 72 | - |
| dc.language | kor | - |
| dc.publisher | 한국해양대학교 일반대학원 | - |
| dc.title | HVPE 방법에 의한 질화물 에피 성장에 대한 연구 | - |
| dc.type | Dissertation | - |
| dc.date.awarded | 2017-02 | - |
| dc.contributor.alternativeName | CHANBIN LEE | - |
| dc.contributor.department | 대학원 전자소재공학과 | - |
| dc.description.degree | Master | - |
| dc.subject.keyword | HVPE(수소기상증착법), Sapphire Substrate(사파이어기판), mixed source(혼합소스), TEM, EDS, XRD, SEM, AFM, AlGaN(알루미늄갈륨나이트라이드), graded AlGaN(선형조성 알루미늄갈륨나이트라이드) | - |
| dc.type.local | Text | - |
| dc.title.translated | Study on the Ⅲ-Ⅴ epilayer growth of the HVPE method | - |
| dc.identifier.holdings | 000000001979▲000000006780▲000002329682▲ | - |
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