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Photoluminescence Investigation of Thick GaN Films Grown on Si Substrates by Hybride Vapor Phase Epitaxy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | M Yang | - |
| dc.contributor.author | SW Kim | - |
| dc.contributor.author | HKim | - |
| dc.contributor.author | KHKim | - |
| dc.contributor.author | SN | - |
| dc.contributor.author | chang | - |
| dc.contributor.author | HS Ahn | - |
| dc.date.accessioned | 2017-02-21T07:13:15Z | - |
| dc.date.available | 2017-02-21T07:13:15Z | - |
| dc.date.issued | 2004 | - |
| dc.date.submitted | 2011-10-13 | - |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/4958 | - |
| dc.publisher | 한국해양대학교 산업기술연구소 | - |
| dc.title | Photoluminescence Investigation of Thick GaN Films Grown on Si Substrates by Hybride Vapor Phase Epitaxy | - |
| dc.type | Article | - |
| dc.citation.title | 산업기술연구 | - |
| dc.citation.startPage | 46 | - |
| dc.citation.endPage | 49 | - |
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