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A study on Electrical Transport Properties of ZnTe buffer layer effect on Tellurium doped GaSb
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 나강영 | - |
| dc.date.accessioned | 2017-02-22T02:17:04Z | - |
| dc.date.available | 2017-02-22T02:17:04Z | - |
| dc.date.issued | 2009 | - |
| dc.date.submitted | 2009-01-15 | - |
| dc.identifier.uri | http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174184 | ko_KR |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/8140 | - |
| dc.description.abstract | Among the III-V binary semiconductors, Gallium Antimonide (GaSb) has attracted considerable attention. Many of its interesting properties are directly associated with its very low effective electron mass and high mobility. Consequently, it is an important candidate in high speed applications in transistors and other devices. Undoped GaSb is always p-type conductivity due to the native defect such as Sb vacancy. Therefore, to achieve n-type thin film with higher carrier mobility, high quality film growth is absolutely required. This thesis presents the electrical transport properties for one typical set of Te-doped GaSb layers | - |
| dc.description.abstract | ii) Type I has a X-ray linewidth of 970 arcsec, while Type II has 2 times smaller value (520 arcsec). The increase of electron mobility in Type II is ascribed to the suppression of defect scatterings by point defects and dislocations, which is consistent to the decrease of X-ray linewidth in Type II. The electron transport mechanisms of the two types of GaSb:Te layers can be explained by ionized-impurity scattering and dislocation scattering. Consequently, it is suggested that the ZnTe buffer layers effectively enhance the structural quality and carrier mobility in Te-doped n-type GaSb epitaxial layers, which will improve the fabrication of optoelectronic devices. | - |
| dc.description.abstract | i) Type I has an electron mobility of 250 ㎠/V·s while Type II has 2.5 times larger value,(630 ㎠/V·s) | - |
| dc.description.abstract | the one is normally grown on a GaAs substrate by molecular-beam epitaxy (Type I), and the other includes a ZnTe buffer between the GaSb:Te layer and the GaAs substrate (Type II) with the structural properties and investigated the effect of ZnTe buffer on the Te-doped GaSb epitaxial layers based on the two layer Hall effect model. The five major scattering mechanisms (ionized impurity, dislocation, piezoelectric, deformation potential and polar phonon) effects were considered. By using this method, two types of GaSb:Te layers show extremely different electrical and structural properties | - |
| dc.description.tableofcontents | Chapter 1 Introduction = 1 1.1 Historical background of Gallium Antimonide = 1 1.2 Purpose and composition of the thesis = 4 Chapter 2 Properties of Gallium Antimonide = 7 2.1 Structural properties = 7 2.1.1 Lattice parameter = 7 2.1.2 Density = 7 2.1.3 Crystal structure = 7 2.2 Thermal properties = 8 2.2.1 Heat capacity and Debye temperature = 8 2.2.2 Elastic moduli and phonon dispersion = 10 2.2.3 Thermal expansion = 13 2.2.4 Thermal conductivity = 14 2.3 Electronic and transport properties = 17 2.3.1 Band structure = 17 2.3.2 Effective masses of electrons and holes = 22 2.3.3 Electron transport = 24 2.3.4 Hole transport = 29 Chapter 3 Growth of GaSb:Te epilayers on GaAs (001) substrate = 36 3.1 Introduction = 36 3.1.1 Zinc Telluride (ZnTe) buffer layer = 36 3.1.2 Elemental Tellurium (Te) dopant source = 39 3.2 Molecular Beam Epitaxial growth techniques = 40 3.2.1 Overview of the MBE growth chamber = 40 3.2.2 Reflection High Energy Electron Diffraction (RHEED) = 42 3.2.3 MBE growth procedures = 44 3.2.4 Fabrication of the high quality n-type GaSb:Te epitaxial layers = 45 3.3 Hall Effect measurement = 46 3.3.1 Experimental setup of Hall measurement = 46 3.3.2 Hall Effects = 47 3.3.3 Van der Pauw method = 49 3.4 High-resolution X-ray Diffraction (HRXRD) measurement = 50 3.4.1 Experimental setup of HRXRD = 50 3.4.2 ω scan (rocking curve) and ω-2θ scan = 51 Chapter 4 Electrical transport properties of GaSb:Te epitaxial layers = 55 4.1 Introduction = 55 4.2 Structural properties of GaSb:Te epitaxial layers = 57 4.3 Electrical properties of GaSb:Te epitaxial layers = 59 4.4 Correction by two-layer Hall Effect model = 63 4.5 Fitting of temperature dependent carrier concentration curves = 65 4.6 Calculation of mobility curves by the Boltzman transport equations = 68 4.6.1 Ionized impurity scattering = 68 4.6.2 Dislocation Scattering = 70 4.6.3 Acoustic phonon: deformation potential = 70 4.6.4 Acoustic phonons: piezoelectric potential = 71 4.6.5 Optical phonons: polar = 72 4.6.6 Matthiessen’s rule = 72 Chapter 5 Conclusion = 75 References = 76 | - |
| dc.language | eng | - |
| dc.publisher | 한국해양대학교 대학원 | - |
| dc.title | A study on Electrical Transport Properties of ZnTe buffer layer effect on Tellurium doped GaSb | - |
| dc.title.alternative | Te Epitaxial Layer | - |
| dc.type | Thesis | - |
| dc.date.awarded | 2009-02 | - |
| dc.contributor.alternativeName | Nyi | - |
| dc.contributor.alternativeName | Khaing Aung | - |
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