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HVPE법에 의한 GaN 성장과 광학적 특성에 관한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김향 | - |
| dc.date.accessioned | 2017-02-22T02:22:05Z | - |
| dc.date.available | 2017-02-22T02:22:05Z | - |
| dc.date.issued | 2004 | - |
| dc.date.submitted | 2006-05-29 | - |
| dc.identifier.uri | http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174290 | ko_KR |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/8284 | - |
| dc.description.abstract | In this study, high quality bulk GaN crystals have been grown on sapphire substrates using the HVPE (hydride vapor phase epitaxy) technique. Ammonia, nitrogen, metallic gallium, hydrogen chloride were used as source materials. The effect of growth parameter such as HCl gas flow was investigated by PL (photoluminescence) and optical microscope. Surface quality of samples was clean. As a result of PL, GaN crystalline was improved in 10 sccm of HCl gas flow. | - |
| dc.description.tableofcontents | Abstract i 1. 서론 1 2. 이론 6 2.1 GaN의 특성 6 2.2 결정성장 14 2.3. 결정특성측정 22 3. 본론 24 3.1 GaN 결정성장 24 3.2 GaN의 광학적 특성 33 4. 실험결과 및 고찰 39 5. 결론 50 참고문헌 52 | - |
| dc.language | kor | - |
| dc.publisher | 한국해양대학교 대학원 | - |
| dc.title | HVPE법에 의한 GaN 성장과 광학적 특성에 관한 연구 | - |
| dc.title.alternative | The Study on the Optical Properties of GaN Grown by HVPE | - |
| dc.type | Thesis | - |
| dc.date.awarded | 2004-02 | - |
| dc.contributor.alternativeName | Hyang Kim | - |
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