한국해양대학교

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Hydride Vapor Phase Epitaxy법에 의한 AlGaAs 기판 위의 cubic GaN 결정성장에 관한 연구

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dc.contributor.author 이호준 -
dc.date.accessioned 2017-02-22T02:22:14Z -
dc.date.available 2017-02-22T02:22:14Z -
dc.date.issued 2006 -
dc.date.submitted 2006-02-10 -
dc.identifier.uri http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174293 ko_KR
dc.identifier.uri http://repository.kmou.ac.kr/handle/2014.oak/8288 -
dc.description.abstract Cubic GaN layers were grown on AlGaAs (001) substrates by hydride vapor phase epitaxy (HVPE) method. Nitridation treatment on the surface of AlGaAs substrate is carried out using ammonia gas before the initial stage of GaN crystal growth, and its effect on the resulting crystal quality is investigated. It was found growth parameter such as nitridation temperature of AlGaAs substrate, low temperature GaN buffer layer and interlayer growth condition, V/III ratio and thickness of GaN layer to be critical determinants for the growth of cubic GaN layer. Nitridation treatment by ammonia gas forms Nitrided layer on AlGaAs substrate surface. The nitrided AlGaAs layer acts as a buffer layer which relaxes strain from difference in lattice constant between AlGaAs and GaN.. In this study, we used multi-buffer (first and second mid-temperature GaN : MT-GaN) layers to obtain cubic GaN films. The first MT-GaN layers were grown at moderate temperature to prevent substrate from thermal etch during high temperature growth. The second MT-GaN layers were used to reduce the hexagonal GaN incorporation in the cubic GaN films. It is demonstrated that a multi buffer layer structure in place of the conventional single buffer layer structure can effectively suppress the hexagonal GaN incorporation. These methods enable us to grow cubic GaN layers on AlGaAs (001) substrates at high temperature (1050 oC). Surface morphologies and chemical constituents of nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and Energy Dispersive X-ray (EDX). For the optical and crystalline characterization of the GaN films, X-ray diffraction (XRD), SEM, Photoluminescence (PL) cathodoluminescence (CL), were carried out. From the above results, we suggest that HVPE method could be possibly used in the growth of cubic GaN. -
dc.description.tableofcontents 목차 Abstract 1. 서론 = 1 2. 이론 = 8 2.1 GaN 물성 = 8 2.2 GaN의 성장방법 = 14 2.2.1 수소 화합물 기상법 (HVPE) = 15 2.2.2 성장 기술 = 20 2.2.2.1 Buffer layer (완충막) = 20 2.2.2.2 ELO = 23 3. 실험 = 25 3.1 GaN 성장 = 25 3.2 분석 방법 = 26 3.2.1 구조적 특성 평가 = 26 3.3.2 광학적 특성 평가 = 27 3.3.2.1 PL(Photoluminescence) = 27 3.3.2.2 CL(Cathodoluminescence) = 28 4. 결과 및 토론 = 31 4.1 cubic GaN 성장에 미치는 영향 = 31 4.1.1 AlGaAs 기판의 질화 처리 = 31 4.1.2 버퍼층과 중간층 성장 = 40 4.1.3 후막 GaN 성장의 V/III ratio 변화 = 47 4.1.4 후막 GaN 두께 변화 = 49 5. 결론 = 55 참고문헌 = 58 -
dc.language kor -
dc.publisher 한국해양대학교 -
dc.title Hydride Vapor Phase Epitaxy법에 의한 AlGaAs 기판 위의 cubic GaN 결정성장에 관한 연구 -
dc.title.alternative The growth of cubic - GaN layer on AlGaAs substrate by Hydride Vapor Phase Epitaxy -
dc.type Thesis -
dc.date.awarded 2006-02 -
dc.contributor.alternativeName Lee -
dc.contributor.alternativeName Ho-Jun -
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