한국해양대학교

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Metalorganic -Hydride Vapor Phase Epitaxy (MO-HVPE) 방법을 이용한 GaN 결정성장에 관한 연구

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dc.contributor.author 이정윤 -
dc.date.accessioned 2017-02-22T02:24:05Z -
dc.date.available 2017-02-22T02:24:05Z -
dc.date.issued 2005 -
dc.date.submitted 2006-04-17 -
dc.identifier.uri http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174338 ko_KR
dc.identifier.uri http://repository.kmou.ac.kr/handle/2014.oak/8340 -
dc.description.abstract In this study, GaN/AlN and GaN/GaN layers were grown on Al2O3 substrates by atmospheric pressure MO-HVPE system in which metal organic sources can be used for the growth of AlN and GaN buffer layers. For the AlN and GaN buffer layer growth, trimethylaluminum (TMA), trimethylgallium (TMG) and ammonia (NH3) were used as precursors. After the buffer layer growth, thick GaN layers were grown on the AlN/Al2O3 and GaN/Al2O3 substrates, using metallic Ga on which HCl gas was over flown and NH3 as source materials. Growth temperature of the thick GaN layers was 1050℃. We investigated material properties of the thick GaN layers grown on various buffer layers, namely, GaN and AlN buffer layers grown by the MO-HVPE, GaN template grown by conventional MOCVD and ZnO buffer layer deposited by sputter system, by using of XRD (X-ray diffraction), PL (photoluminescence) and CL (cathodoluminescence) measurements. Through PL and CL measurements, we could confirm that the thick GaN grown on AlN buffer layer has better crystal quality than any other buffer layers used in this experiment. Also as another study, growth of Mg doped thick GaN layers were performed by using of mixed-source HVPE in which metallic Ga mixed with Mg was used as a group III source material for the growth of GaN:Mg. A luminescence peak which might be from Mg related recombination center could be observed in cathodoluminescence (CL) spectroscopy and Auger electron spectroscopy (AES) measurement. From the above results, we suggest that mixed-source HVPE method could be possibly used in the growth of Mg doped thick GaN growth -
dc.description.tableofcontents Abstract 1. 서 론 1 2. 이 론 7 2.1 GaN 연구배경 7 2.2 GaN의 특성 9 2.2.1 물리적 특성 9 2.2.2 광학적&#8226 -
dc.description.tableofcontents Hydride Vapor Phase Epitaxy) 36 4. 결과 및 토론 41 4.1 MO-HVPE를 이용한 버퍼층과 후막 GaN 결정성장 41 4.1.1 AlN 버퍼층의 성장과 다른 버퍼층과의 비교 41 4.1.2 버퍼층의 성장온도에 따른 후막 GaN의 광학적 성질 54 4.2 Mixed source HVPE법에 의한 Mg doped GaN의 성장 63 4.2.1 Mg-doped GaN의 결정질과 성분 분석 64 4.2.2 Mg doped GaN 의 CL 결과 67 5. 결 론 69 참고문헌 72 -
dc.description.tableofcontents 전기적 특성 16 2.3 GaN 기판 19 2.3.1 사파이어(Al2O3) 19 2.3.2 SiC 20 2.3.3 기타 21 2.4 에피탁시(epitaxy) 성장법 23 2.4.1 Hydride Vapor Phase Epitaxy (HVPE) 23 2.4.2 Metal-Organic Vapor Phase Epitxy (MOVPE) 24 2.4.3 Molecular Beam Epitaxy (MBE) 25 2.5 결정성장기술 26 2.5.1 완충층(Buffer layer)의 이용과 영향 26 2.6 결정성 평가 기술 28 2.6.1 PL(Photoluminescence) 29 2.6.2 CL(Cathodoluminescence) 32 2.6.3 AFM(atomic force microscopy) 32 3. 실 험 34 3.1 MO-HVPE 장치와 그 장점 34 3.2 MO-HVPE 방법을 이용한 버퍼층과 GaN 결정성장 36 3.2.1 MO-HVPE(Metalorganic &#8211 -
dc.language kor -
dc.publisher 한국해양대학교 대학원 -
dc.title Metalorganic -Hydride Vapor Phase Epitaxy (MO-HVPE) 방법을 이용한 GaN 결정성장에 관한 연구 -
dc.title.alternative The growth of GaN by Metalorganic Hydride Vapor Phase Epitaxy -
dc.type Thesis -
dc.date.awarded 2005-08 -
dc.contributor.alternativeName Jeong Yoon Yi -
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