Mixed-source HVPE 방법에 의한 III족 질화물반도체와 헤테로 구조의 성장에 관한 연구

Abstract

This study has proposed "mixed-source" as new growth method for the improvement of the conventional HVPE method. Moreover, It has suggested AlGaN, InGaN, n, or p doping experiments, and heterostructure for gaving a seal to utility of those. This research paper made the offer a new method of taking full advantage of the strengths and weaknesses of HVPE, so that put forward III-V group of elements, nitrides semiconductors. One of the existing method of HVPE as a case of ternary compound semiconductor is fixing Al metal and Ga metal in a different position, make up AlCI and GaClwith acting upon HCl, and this act on ammonia for put forward AlGaN,so that multiply equipment and costliness with complex.

Hereupon, the proposal method of this paper is melt Al as metal form on Ga metal direct. It is introduction of a technology of growth similar to putting forward AlGaAs from LPE into HVPE. AlGaAs was put forward with acting on ammonia form a chloride of Al and Ga for saturated Al on Ga metal with right temperature, and shed HCl on the surface. The mixed-source HVPE is the method of melting a source or dopant on Ga metal direct, utilize III group of elements or a material of dopant. Besides, In this way, melt In metal to Ga solution for the putting forward InGaN, melt Te metal to Ga solution for dopant form n, melt Mg metal to Ga solution direct for dopant form p,made III group of elements, form n or form p for the source of dopant.

Accordingly the mixed-source HVPE proposed in this research is useful method for the putting forward a nitride semiconductor of various III group of elements with more simple way of machanism than existing HVPE. For the proof of the utility of the mixed-source HVPE, AlGaN, Te-doped GaN and AlGaN, Mg-doped GaN, InGaN,and heterostructure has suggested for the research.The mixed-source HVPE proposed in this research as putting forward AlGaN with melt Al as metal form on Ga metal direct has made sure of possibility. The experiment on variation of atom ratio Al among mixed-source, variation of temperature, variation of HCl flux was for the control Al on the layer of AlGaN. So that for the control of Al composition on AlGaN layer with the mixed-source HVPE, the variation of temperature of source sphere is needed to easy method for the putting forward layer of AlGaN with from 0.5% to 80% of Al composition. Besides, the experiment doped for the nitride semiconductor of form N and p with multiformity of the mixed-source HVPE has finished. The consequence of put forward layer of Te-doped GaN with Te from form n dopant is the result of change of carrier density from 1 x 1017 cm-3 to 2 x 1018 cm-3 through Hall measurement, and the case of Te-doped AlGaN, the form n AlGaN carrier density from 9 x 1016 cm-3 to 7 x 1018 cm-3 has resulted with carrier density relation of variation of atom ratio of Te. The result of put forward Mg-doped GaN with Mg metal from form p dopant is form p of GaN hall density from 1.5 x 1016 cm-3 to 3.2 x 1016 cm-3 with atomic fraction of Mg. So that the mixedsource HVPE proposed in this research is very useful method of conductivity form n-doped GaN and AlGaN, form p-doped GaN.

Moreover, the mixed-source HVPE for the putting forward various substance has suggested a grain of InGaN marked as optical confinement of super lattice device. The layer of InGaN identified element of In with XPS analysis with the layer of In composition from 3% to 10%. So that the mixed-source HVPE is needed for the growth of the layer of InGaN. And AlGaN, form n-doped GaN and AlGaN, p-doped GaN, InGaN from the mixed-source HVPE is useful for manufacture the element with heterostructure, so that the possibility of method can be presented.

Therefore, I would emphasize that the mixed-source HVPE proposed in this research is one of the useful method as economical and applicable of various part for the putting forward nitride semiconductor of III group of elements.