한국해양대학교

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경사면 사파이어 기판을 이용한 무극성 m면 질화갈륨 박막 성장 방법

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dc.contributor.author 정수훈 -
dc.date.accessioned 2017-02-22T05:22:29Z -
dc.date.available 2017-02-22T05:22:29Z -
dc.date.issued 2013 -
dc.date.submitted 57014-05-25 -
dc.identifier.uri http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174563 ko_KR
dc.identifier.uri http://repository.kmou.ac.kr/handle/2014.oak/8612 -
dc.description.abstract Most of GaN-based devices have been grown on polar GaN along the [0001] direction. But, GaN-based materials have large piezoelectric fields, therefore piezoelectric fields can be reduced in the polarization. Thus, we conclude that efficient optical devices can be obtained by control of the crystal orientation, growth of the non-polar epilayer is indispensable. The proposal suggests using off-cut (1010) plane sapphire substrate to achieve high quality non-polar (1010) plane GaN thin film. In previous studies, non-polar growth methods have been attempted MOVPE, MOCVD, HVPE, MBE and various growth systems. However, it is difficult to grow non-polar nitrides grown on due to the strong anisotropy of the surface properties epitaxial layers with a high density of crystalline defects. So, In-situ surface observation is effective to control dislocation densities as possible in non-polar growth by using gas-source molecular beam epitaxy. In this experiment, we reported epitaxial growth of m- plane GaN on m- sapphire substrates, We have found that the crystal orientations of the as grown m- plane GaN either non-polar m- plane (1010) / semi-polar (1122) and (1013) plane. Grown under identical condition, for the epitaxial layer affects the surface morphology by the growth of nitridation temperature [low temperature nitridation (LNT) and high temperature nitridation (HNT)] depend on. The substrates were on a- axis 2 degree off-angle m-sapphire. Analysis of crystal orientations were indexed surface by reflection high energy electron diffraction (RHEED), evaluated of optical properties by photoluminescence (PL), Surface morphologies of the samples were characterized by field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). -
dc.description.tableofcontents List of Tables ....................................................................................................................... ⅳ List of Figures ....................................................................................................................... ⅴ Abstract ....................................................................................................................................... ⅷ 1. 서 론 1.1 질화갈륨의 특성 및 응용 ........................................................................................ 7 1.2 무극성 질화갈륨의 필요성 및 문제점 1.2.1 이론적 배경 ...................................................................................... 10 1.2.2 기판과 질화갈륨 성장 시의 결함 ...................................................... 16 1.2.3 결함에 의한 반극성 구조 형성 ...................................................... 20 1.3 최종 연구 목적 ....................................................................................................... 21 1.4 참고문헌 ....................................................................................................... 22 2. 실험 및 분석 방법 2.1 박막 성장 2.1.1 에피 성장 ....................................................................................................... 25 2.1.2 Molecular Beam Epitaxy (MBE) ...................................................... 30 2.2 박막 분석 2.2.1 Reflection High Energy Electron Diffraction (RHEED) ...................... 33 2.2.2 X-Ray Diffraction (XRD) ...................................................................... 38 2.2.3 Photoluminescence (PL) ...................................................................... 40 2.2.4 Atomic force microscopy (AFM) ...................................................... 42 2.2.5 Field Emission Scanning Electron Microscopy (FESEM) ...... 45 2.3 참고문헌 ....................................................................................................... 47 3. 사전 열처리 기판을 이용한 질화갈륨 박막 특성 3.1 서론 3.1.1 선행 연구를 통한 경사면 (1010) 면 기판의 도입 ...................... 48 3.1.2 사전 열처리 기판의 필요성 ...................................................................... 53 3.2 기판의 사전 열처리 ...................................................................................... 54 3.3 사전 열처리 기판을 이용해 성장된 GaN 후막 분석 3.3.1 Surface morphology ...................................................................... 56 3.3.2 Structural properties ...................................................................... 58 3.3.3 Optical properties ...................................................................................... 60 3.4 참고문헌 ...................................................................................................... 62 4. 기판 질화반응의 영향에 의한 GaN 박막 특성 분석 4.1 사파이어 기판의 질화반응 ...................................................................... 63 4.2 GaN 박막의 분석 4.2.1 In-situ observation ...................................................................................... 65 4.2.2 Surface morphology ...................................................................... 68 4.2.3 Omega - 2theta scan ...................................................................... 70 4.2.4 Crystallinity ...................................................................................... 71 4.2.5 Optical properties ...................................................................................... 74 4.3 참고문헌 ...................................................................................................... 77 5. 요약 및 결론 ...................................................................................................................... 78 -
dc.language kor -
dc.publisher 한국해양대학교 -
dc.title 경사면 사파이어 기판을 이용한 무극성 m면 질화갈륨 박막 성장 방법 -
dc.type Thesis -
dc.date.awarded 2013-02 -
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응용과학과 > Thesis
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