질화물 기반의 양자점 하이브리드 태양전지 제작 및 특성평가

Abstract

In this study, we report the novel hybrid heterojunction solar cell based on GaN quantum dots (QDs) as an electron acceptor material and P3HT as a electron donor material, which has not been tried for the solar cell so far. Fabrication of the hybrid solar cell has been progressed by growing GaN QDs on a GaN/Si(111) substrate using HVPE (hydride vapor phase epitaxy) technique and sequentially coating P3HT film on the top of QDs. The conducting polymer of PEDOT:PSS(PH500) which has been named by Baytron P was used as a positive electrode in the hybrid structure.

The surface morphologies and lattice arrangement of the grown GaN QDs were investigated through FE-SEM (field emission sanning electron microscopy) and HR-TEM (high resolution transmission electron microscopy) measurements,and then the overall performance of the complete hybrid solar cell was analyzed by J-V curve which was measured by Solar simulator.