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AZO 박막의 미소구조 성장에 따른 광학적/전기적 특성에 관한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안승준 | - |
| dc.date.accessioned | 2017-02-22T02:17:38Z | - |
| dc.date.available | 2017-02-22T02:17:38Z | - |
| dc.date.issued | 2011 | - |
| dc.date.submitted | 2012-10-29 | - |
| dc.identifier.uri | http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174197 | ko_KR |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/8157 | - |
| dc.description.abstract | TCO (transparent conducting oxide) films are widely used as photoelectric devices in flat panel displays and solar cells. Until now, ITO (indium-tin oxide) films have been used as TCO films. However, with the increase in the cost of ITO films, researchers have been searching for new materials to use as TCO films. And in this study, the application and improvement of the optical and physical properties of optical thin film by manipulating the micro-structure was studied. Transparent and conductive aluminum-doped zinc oxide films were prepared by RF reactive magnetron sputtering at different substrate temperatures. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. All of the films that were deposited at temperatures higher than 200 °C substrate temperature demonstrated over 80% transmittance in the range of the visible spectrum. Since the surface mobility of a particle is limited at a low temperature, the growth rate of AZO thin films would be higher than that at a high temperature. And the films showed minimum resistivity of 6.77 × 10 -3 Ω• | - |
| dc.description.abstract | cm at substrate temperature of 200 °C. | - |
| dc.description.tableofcontents | Abstract - 1 - 1. Introduction - 2 - 2. Background - 5 - 2.1 The characteristics of transparent conductive oxide - 5 - 2.2 The Method to Manufacture Transparent conductive oxide - 9 - 2.3 The Growth of Thin Films and the Micro Structure - 12 - 2.3.1 The micro structure of the thin films - 12 - 2.3.2 The growth of the thin film - 14 - 2.3.3 The structure zone model(SZM) - 22 - 3. Experiment - 30 - 3.1 Manufacture of AZO films - 30 - 3.1.1 Equipment of Experimental - 30 - 3.1.2 Materials of Experimental - 34 - 3.1.3 Experiment procedure - 35 - 3.2 Properties measurement of AZO films - 38 - 3.2.1 Measurement of the thin film thickness - 38 - 3.2.2 The measurement of electric non-resistance of the thin film - 39 - 3.2.3 Measure transmittance - 41 - 4. Result and discussion - 43 - 4.1 Growth rates of the AZO thin films - 43 - 4.2 Check of the growth structure by SEM picture - 45 - 4.3 Optical transmittances and resistivity as various temperatures - 47 - 4.4 Optical trancemittances and resistivity as various Al contents - 51 - 5. Conclusion - 54 - Reference - 55 | - |
| dc.language | eng | - |
| dc.publisher | 한국해양대학교 대학원 | - |
| dc.title | AZO 박막의 미소구조 성장에 따른 광학적/전기적 특성에 관한 연구 | - |
| dc.title.alternative | Research on the optical and electrical properties of Al doped ZnO films as growth of micro-structure | - |
| dc.type | Thesis | - |
| dc.date.awarded | 2011-08 | - |
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