DVD-ROM용 레이저 다이오드를 구현하기 위한 포토 에칭에 관한 연구

Abstract

It was researched the fabrication of 650nm DVD-ROM laser diode which has the selective growth buried ridge(SGBR) structure. The experiment was especially focused to the stabilization of unit fabrication about photolithography and wet etching. The HBr line was used as etchant in order to etch all the materials used in the fabrication of SGBR LD structure. It was studied the variation of component in HBr source to find the etching condition. As a result, HBr:H2O2:H2O=2:2:10 was selected as a first etching source and H2SO4:H2O=1:1(47℃) was used as second and third etchant. It was also constructed the new etching fabrication flow as follows. In this thesis, the chemical etching fabrication flow was proposed newly to make the SGBR LD structure. These researches are to be expected to contribute in the stabilization of unit fabrication about chemical wet etching.