In recent decades, ZnO nanorod was widely used nanostructure for applications such as ZnO based light emitting diodes, field-effect transistor and laser diodes owing to its electrical, structural and optical properties, which depend strongly on the size, defect concentration, along with surface characteristics. To realize the purpose of changing the morphology and improving the opt electrical properties, indium doped ZnO nanorods were grown on ZnO seed layer by hydrothermal method. In this study, the growth and the relationship of the morphology and indium concentration of In-doped ZnO nanorods were theoretically demonstrated.
In the chapter 1, introduction about this study was briefly described. The basic properties, growth process (especially growth mechanism of hydrothermal method), characterization of In-doped ZnO nanorod were introduced in chapter 2 and 3. The chapter 4 reveals the effects of In content on the In-doped ZnO nanorods. The structural and optical properties were investigated by X-ray spectroscopy, field emission scanning electron microscopy and photoluminescence. In chapter 5, the different In-doped ZnO nanostructure was grown by using different Indium material and the growth mechanism of that nanostructure was discussed at detail. Finally, results were summarized and concluded.