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InGaP/GaAs HBT를 이용한 Ku-band용 고집적 downconverter MMIC에 관한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이경식 | - |
| dc.date.accessioned | 2017-02-22T02:22:32Z | - |
| dc.date.available | 2017-02-22T02:22:32Z | - |
| dc.date.issued | 2007 | - |
| dc.date.submitted | 2007-01-17 | - |
| dc.identifier.uri | http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174300 | ko_KR |
| dc.identifier.uri | http://repository.kmou.ac.kr/handle/2014.oak/8297 | - |
| dc.description.abstract | In this work, using InGaP/GaAs HBT, we have developed highly integrated Ku-band downconverter including LO rejection filter, mixer and two stage amplifiers. Especially, spiral inductor was optimally designed for a rejection of LO leakage and second harmonic LO leakage signal. According to measurement results, the downconverter MMIC showed a conversion gain of 9.5 dB and IIP3(Third order input intercept point) of -4.5 dBm. The downconverter MMIC showed a LO leakage suppress of -36 dBc and second harmonic LO leakage suppress of -55 dBc, respectively. The good LO and its second harmonic suppress characteristic was resulted from the optinally designed spiral inductors. Above results indicate that Ku-band downconverter employing InGaP/GaAs HBT exhibited good RF performances, and the proposed Ku-band downconverter employing InGaP/GaAs HBT is a promising candidate for a realization of one chip transceiver. | - |
| dc.description.tableofcontents | Ⅰ. 서론 = 1 Ⅱ. InGaP/GaAs HBT = 3 2.1 InGaP/GaAs HBT 구조 = 3 2.2 InGaP/GaAs HBT 능동소자 모델 = 4 Ⅲ. Spiral inductor 설계 = 7 3.1 Spiral inductor의 구조 및 등가모델 = 7 3.2 Spiral inductor의 기생성분 = 9 3.2.1 직렬저항 = 9 ① DC 저항 = 9 ② 표피효과(skin effect) = 10 ③ 근접효과(proximity effect) = 11 3.2.2 직렬 커패시터성분(Cs) = 13 3.2.3 절연층의 커패시터성분(CSi) = 14 3.2.4 Substrate Loss = 15 ① Substrate에서의 커패시터성분 = 15 ② Substrate에서의 저항성분 = 16 ③ Substrate에서의 Eddy current = 16 3.3 자기 공진 주파수(self resonance frequency) = 17 3.4 Spiral inductor 계산 = 18 3.4.1 인덕턴스 및 커패시턴스 계산 = 18 3.4.2 LO 누설신호 제거용 spiral inductor 설계 = 22 Ⅳ. Mixer 이론 = 24 4.1 주파수 혼합기로서의 믹서 = 24 4.2 downconver의 원리 = 25 Ⅴ. InGaP/GaAs HBT를 이용한 고집적 Ku-band downconverter의 설계 = 27 5.1 InGaP/GaAs HBT Ku-band downconverter mixer 설계 = 29 5.2 InGaP/GaAs HBT IF 전력 증폭기 설계 = 33 Ⅵ. 제작 및 결과 = 36 6.1 변환이득 그래프 = 38 6.2 LO 누설신호 제거 그래프 = 39 6.3 IP3 그래프 = 41 Ⅶ. 결론 = 44 참고문헌 = 46 | - |
| dc.language | kor | - |
| dc.publisher | 한국해양대학교 일반대학원 | - |
| dc.title | InGaP/GaAs HBT를 이용한 Ku-band용 고집적 downconverter MMIC에 관한 연구 | - |
| dc.title.alternative | A Study on Highly Integrated Ku-Band Downconverter MMIC Employing InGaP/GaAs HBT | - |
| dc.type | Thesis | - |
| dc.date.awarded | 2007-02 | - |
| dc.contributor.alternativeName | Lee | - |
| dc.contributor.alternativeName | Kyung-Sik | - |
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