In 첨가양에 따른 IZO 박막의 미세구조 특성연구

Abstract

We investigated changes in the preferred orientation and microstructure of IZO films with increasing In content. ZnO film and IZO films with In contents in the range of 0.3~50 at.% were deposited on Si (111) substrates by pulsed laser deposition and were subsequently characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscope (TEM). Structural analysis of the films revealed that with increasing In content, the preferred orientation of films changed from (001) to random for an In content of 10 at.% and finally became (100) for an In content of 20 at.%. The grain size of columns and RMS values showed a gradual decrease with increasing In content. By introducing an In content of up to 10 at.%, the initial orientation of nuclei changed from c-axis to random

nuclei with a preferred a-axis are dominant for an In content of 20 at.%, reflecting a deterioration of the tetrahedral coordination of ZnO. Consequently, the growth direction of grains changed and the preferred orientation of grains affected the microstructure