새로운 단일 칩 성장공법을 이용한 수직형 발광다이오드 연구

Abstract

The light-emitting diode manufacture to get the light from solid-state light sources is mainly executed by epitaxial growth techniques such as a molecular beam epitaxial, a metal organic chemical vapor deposition and a hydride vapor phase epitaxy method. Here we make the light-emitting diode emitting light in the visible spectral range by a new process of the advanced hydride vapor phase epitaxy method with epoch-making subtraction of the steps for a vertical-type light-emitting diode fabrication without a substrate different from the existing hydride vapor phase epitaxy method. The new single chip-growth process is completed by the only 4 steps including the photolithography of the mask manufacture, the epitaxial layer growth, the sorting and the metallization by using the our unique methods at each step, and all of the epitaxial layers consisting a chip are grown consecutively using the multi-boat system with the mixed-source materials in sequence in the each boat by an advanced hydride vapor phase epitaxy method mingling both the in-situ hydride vapor phase epitaxy technology of the vapor phase epitaxy method and the sliding boat system of the liquid phase epitaxy method. These vertical-type light-emitting diodes with the GaN and the AlxGa1-xN active layers, respectively, grown using the multi-boat system with the mixed-source materials without a substrate provide a new concept in front of the solid-state light sources from the various measurements to proof the characteristics of the light emitted.