한국해양대학교

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HVPE법에 의한 GaN 성장과 광학적 특성에 관한 연구

Title
HVPE법에 의한 GaN 성장과 광학적 특성에 관한 연구
Alternative Title
The Study on the Optical Properties of GaN Grown by HVPE
Author(s)
김향
Publication Year
2004
Publisher
한국해양대학교 대학원
URI
http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174290
http://repository.kmou.ac.kr/handle/2014.oak/8284
Abstract
In this study, high quality bulk GaN crystals have been grown on sapphire substrates using the HVPE (hydride vapor phase epitaxy) technique. Ammonia, nitrogen, metallic gallium, hydrogen chloride were used as source materials. The effect of growth parameter such as HCl gas flow was investigated by PL (photoluminescence) and optical microscope. Surface quality of samples was clean. As a result of PL, GaN crystalline was improved in 10 sccm of HCl gas flow.
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전자통신공학과 > Thesis
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