한국해양대학교

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InGaP/GaAs HBT를 이용한 Ku-band용 고집적 downconverter MMIC에 관한 연구

Title
InGaP/GaAs HBT를 이용한 Ku-band용 고집적 downconverter MMIC에 관한 연구
Alternative Title
A Study on Highly Integrated Ku-Band Downconverter MMIC Employing InGaP/GaAs HBT
Author(s)
이경식
Publication Year
2007
Publisher
한국해양대학교 일반대학원
URI
http://kmou.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002174300
http://repository.kmou.ac.kr/handle/2014.oak/8297
Abstract
In this work, using InGaP/GaAs HBT, we have developed highly integrated Ku-band downconverter including LO rejection filter, mixer and two stage amplifiers. Especially, spiral inductor was optimally designed for a rejection of LO leakage and second harmonic LO leakage signal.

According to measurement results, the downconverter MMIC showed a conversion gain of 9.5 dB and IIP3(Third order input intercept point) of -4.5 dBm. The downconverter MMIC showed a LO leakage suppress of -36 dBc and second harmonic LO leakage suppress of -55 dBc, respectively. The good LO and its second harmonic suppress characteristic was resulted from the optinally designed spiral inductors.

Above results indicate that Ku-band downconverter employing InGaP/GaAs HBT exhibited good RF performances, and the proposed Ku-band downconverter employing InGaP/GaAs HBT is a promising candidate for a realization of one chip transceiver.
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전파공학과 > Thesis
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