The In₂O₃-SnO₂, ITO, thin film is a transparent conductive film. And the ITO film is one of the materials for widely practical usage in the optical electron field.. Because the ITO film has high transparency in visible spectral region and low electrical resistivity, it has excellent electromagnetic shielding effectiveness. In this study, the ITO film was prepared onto plastic film substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment, in which a metallic indium tin alloy target was used . The effects of oxygen gas flow rate and bias voltage on the electrical resistivity and transparency of the ITO film were discussed. For low electrical resistivity of the ITO film, the electromagnetic shielding effectiveness was studied. The results obtained were as follows:
(1)The ITO film produced at room temperature had amorphous structure with very smooth surface.
(2)The electrical resistivity of ITO film deposited at room temperature showed minimum value at the oxygen gas flow rate of 0.4sccm.
(3)The electrical resistivity of ITO film deposited at room temperature depended on the bias voltage and showed the minimum value in the bias voltage of -70V
(5)When the bias voltage was -70V, the ITO film deposited at room temperature showed the most electromagnetic shielding effectiveness (21dB)